About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Paper
Mitigation of extreme ultraviolet mask defects by pattern shifting: Method and statistics
Abstract
Currently the mask blanks used in extreme ultraviolet lithography cannot be fabricated free of defects. A rapid method of determining the optimum placement of mask patterns on the blank to avoid these defects is described. Using this method, the probability of fabricating defect-free masks, when the pattern is (1) randomly placed on the mask blank or (2) positioned optimally to avoid defects, is determined for a variety of integrated circuit designs, defect densities, and defect sizes. In addition to circular defects, oval and clusters of defects are also considered. Finally, simple analytical expressions for the probability of obtaining a defect-free mask in the case of random placement of the mask pattern is presented and compared to Monte Carlo simulations. © 2012 American Vacuum Society.