Mid-infrared broadband modulation instability and 50 dB Raman assisted parametric gain in silicon photonic wires

Abstract

We demonstrate broadband modulation instability, > 40 dB parametric amplification with on-chip gain bandwidth > 580 nm, and narrowband Raman-assisted peak on-chip gain exceeding 50 dB, using mid-infrared dispersion-engineered silicon nanophotonic wires. © 2011 OSA.