Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films. © 1991 Elsevier Science Publishers B.V. All rights reserved.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J. Tersoff
Applied Surface Science
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990