Publication
INTERMAG 2003
Conference paper
Mg AlOx barriers for low-resistance tunnel-valve sensors
Abstract
The Mg AlOx barriers for low-resistance tunnel-valve sensors was presented. It was shown the magnetic coupling field between free and pinned electrodes across 10 A-thick MgAl barriers oxidized for 15 min in 500 mTorr O2. The use of Mg as an alloying element was also studied.