Publication
INTERMAG 2003
Conference paper

Mg AlOx barriers for low-resistance tunnel-valve sensors

Abstract

The Mg AlOx barriers for low-resistance tunnel-valve sensors was presented. It was shown the magnetic coupling field between free and pinned electrodes across 10 A-thick MgAl barriers oxidized for 15 min in 500 mTorr O2. The use of Mg as an alloying element was also studied.

Date

Publication

INTERMAG 2003

Authors

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