Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
T.N. Morgan
Semiconductor Science and Technology