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Modeling polarization for Hyper-NA lithography tools and masks
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Rough silicon surfaces resulting from CF4 reactive ion etching have been studied by scanning electron microscopy/scanning Auger microscopy and x‐ray photoemission spectroscopy. The experimental data demonstrate a roughening mechanism based on laterally non‐uniform etch rates due to the existence of involatile surface residues. Copyright © 1986 John Wiley & Sons Ltd.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
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