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Applied Physics Letters
Paper

Mechanism for bistability in organic memory elements

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Abstract

The resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles was discussed. The features and fabrication of an operational switch were studied. An N shaped equilibrium current-voltage curve was observed for these organic devices. Result show that charge trapping and space-charge field inhibition of injection were responsible for the bistable resistance behavior of organic devices.

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Publication

Applied Physics Letters

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