Measurements of the rectifying barrier heights of various rhodium silicides with n-silicon

Abstract

The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Rh, RhSi, Rh4S 5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current-voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.