C.C. Williams, H.K. Wickramasinghe
Microelectronic Engineering
Measurement and control of high-aspect-ratio structures such as dynamic random-access memory trenches is an important step in the manufacture of modern memory devices. We present a novel technique based on infrared interferometry that has been implemented in manufacturing and is capable of measuring sub-0.25-μm-wide and 10-μm-deep trenches nondestructively and with an accuracy of better than 0.1 μm. © 1999 Optical Society of America.
C.C. Williams, H.K. Wickramasinghe
Microelectronic Engineering
R.S. Shenoy, K. Gopalakrishnan, et al.
VLSI Technology 2006
C.C. Williams, H.K. Wickramasinghe
IUS 1985
Y. Martin, H.K. Wickramasinghe
Applied Physics Letters