Peter J. Price
Surface Science
A technique for measuring stress (positive and negative) with a lateral spatial extent of approximately 2 μm is introduced. The technique, implemented using a Raman microprobe, is demonstrated with measurements of the frequency shift of the sharp, R‐luminescence lines (2Ā and Ē to 4A2 radiative transitions) in, and around, a hardness indentation in a 0.06‐wt%‐chromium doped sapphire. From the observed frequency shifts the stresses in regions sampled in the hardness impression, in the complex stress field surrounding it, and at the tip of a crack are measured. Copyright © 1990, Wiley Blackwell. All rights reserved
Peter J. Price
Surface Science
R.W. Gammon, E. Courtens, et al.
Physical Review B
Ellen J. Yoffa, David Adler
Physical Review B
Julien Autebert, Aditya Kashyap, et al.
Langmuir