Material reaction and silicide formation at the refractory metal/silicon interface

Abstract

Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low-temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Å or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.