F.K. LeGoues, M.C. Reuter, et al.
Physical Review Letters
Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low-temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Å or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.
F.K. LeGoues, M.C. Reuter, et al.
Physical Review Letters
Marián Maňkoš, R.M. Tromp, et al.
Physical Review Letters
F.J. Himpsel, P.M. Marcus, et al.
Physical Review B
M. Poppeller, E. Cartier, et al.
Microlithography 1999