About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEDM 1996
Conference paper
Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
Abstract
Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.