Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

Abstract

Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.