Magnetotunneling from accumulation layers in AlxGa1-xAs capacitors

T.W. Hickmott

doi:10.1016/0039-6028(86)90454-1

Surface Science

Paper

03 Aug 1986

Magnetotunneling from accumulation layers in Al_xGa_1-xAs capacitors

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Abstract

Observations of magnetic freeze-out, sequential single-phonon emission, and the effect of Landau levels on tunneling from accumulation layers in n--GaAs-undoped AlxGa1-xAs-n+ GaAs capacitors are reviewed. © 1986.

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