Magnetotransport properties and subband structure of the two-dimensional hole gas in GaAs-Ga1-xAlxAs heterostructures

Abstract

Systematic magnetotransport measurements of two-dimensional holes in various GaAs-Ga1-xAlx As heterostructures are reported. The behavior of a heterojunction and a 200-AÌ quantum well can be explained on the basis of zero-field spin-split subbands, whereas that of a 100-AÌ quantum well is consistent with a spin-degenerate ground subband in the absence of a magnetic field. However, in a 50-AÌ quantum well we found an unusual relation between the filling factor and the spin splitting. © 1986 The American Physical Society.