PaperEffect of surface scattering on electron mobility in an inversion layer on p-type siliconF. Fang, S. TriebwasserApplied Physics Letters
PaperOn the effective mass and collision time of (100) Si surface electronsF. Fang, A.B. Fowler, et al.Surface Science
PaperEffects of higher sub-band occupation in (100) Si inversion layersW.E. Howard, F. FangPhysical Review B
