W.P. Dumke, R.R. Haering
Physical Review
For InSb tunnel diodes placed in a magnetic field H, the ratio of longitudinal to transverse tunnel currents yields a relatively direct measurement of the tunneling exponential (V). For a typical InSb diode we found 0, the zero bias value of , to be 10.7±0.2, which implies an effective built-in junction field of 5.7±0.1×104 vcm. This value agrees well with the maximum and average junction fields calculated using the known doping concentrations and assuming a step junction. The pre-exponential tunneling factor is found to be (1.8±0.4)×10 7 ampv cm2, which is about 30 times larger than Kane's theoretical result. The voltage dependence of is found to be expressible as =0(1-VV0)-1n with V0=0.2 ev and n=2.2. © 1962 The American Institute of Physics.
W.P. Dumke, R.R. Haering
Physical Review
R. Tsu, L. Esaki
Applied Physics Letters
H. Kawamura, R. Tsu, et al.
Physical Review Letters
L. Esaki
ICPS Physics of Semiconductors 1984