O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
U1-xSbx, amorphous ferromagnets were prepared that show a magnetoresistance anisotropy (AMR) reaching 26% at 10 K, in a 50kOe field. This is a striking result, since the AMR of typical amorphous ferromagnets does not exceed 1%. These materials are random anisotropy ferromagnets, with large coercive fields reaching 20 kOe at 10 К and with Curie temperatures ranging from 92 to 132K. Magnetization reversal processes at mean-free path level are discussed based on magnetoresistance hysteresis cycle data. The local magnetization reversal processes are found to be highly dependent on the magnetic history of the sample. © 1991 IOP Publishing Ltd.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983