E. Flück, F. Horst, et al.
IEEE Photonics Technology Letters
Conference paper
Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers
Abstract
Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90°C.
Related
F. Horst, R. Germann, et al.
IEEE Photonics Technology Letters
S.J. Koester, E.W. Kiewra, et al.
Applied Physics Letters
Conference paper
High quality index guided ridge AlGaInP/GaInP visible lasers
G.L. Bona, P. Roentgen, et al.
ISLC 1990