Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers

P. Linger; G.L. Bona; R. Germann; P. Roentgen; D.J. Webb

doi:10.1109/ISLC.1992.763631

ISLC 1992

Conference paper

21 Sep 1992

Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers

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Abstract

Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90°C.

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Time-resolved investigations of sidewall recombination in dry-etched GaAs wires

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CW and time resolved luminescence study of dry etch damage in semiconductor wires

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Abstract

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