Sai Zeng, Angran Xiao, et al.
CAD Computer Aided Design
This paper is an overview of work at the IBM Thomas J. Watson Research Center on the chemical and physical considerations underlying the development of a lowtemperature chemical vapor deposition process, designated ultrahigh-vacuum/ chemical vapor deposition (UHV/CVD). The origins of the rigorous vacuum and chemical purity requirements of the process are discussed. Operating in the range of 500°C, the process has made it possible to explore the use, in silicon-based devices and atomiclength-scale structures, of a number of metastable materials in the Si:Ge system. Also discussed is associated experimental work on the fabrication of high-speed heterojunction bipolar transistors and highmobility two-dimensional hole-gas structures. © 2000 IBM.
Sai Zeng, Angran Xiao, et al.
CAD Computer Aided Design
B.K. Boguraev, Mary S. Neff
HICSS 2000
Maurice Hanan, Peter K. Wolff, et al.
DAC 1976
Alessandro Morari, Roberto Gioiosa, et al.
IPDPS 2011