LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD.

Abstract

We have demonstrated the growth of high quality MOCVD Al//xGa//1// minus //xAs over the entire growth temperature range 600-800 degree C through suitable modifications to the growth system. These growths are characterized by both an increased photoluminescence intensity and a decreased background carrier concentration as the growth temperature is reduced. The maximum photoluminescence intensity was found at a growth temperature of approx. 650 degree C for x greater than equivalent to 0. 2 in Al//xGa//1// minus //xAs. The photoluminescence intensity also increased monotonically with AlAs mole fraction in the alloy. Controlled Si doping at moderate carrier concentrations ( less than equivalent to 10**1**7 cm** minus **3) has been achieved at these temperatures.