Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
C. Rossel, A. Dimoulas, et al.
ESSDERC 2008
The ability to modify the stacking sequence of ultrathin films offers a unique way to change either the interaction strength or the doping, but demands a careful control of each atomic monolayer. Progress is hampered by the lack of a direct method that allows differentiation on a local scale between the various terminating layers of a crystal. Here, the combination of a vacuum annealing process and friction force microscopy reveals this local distinction on a SrTiO3 surface. Using the friction contrast, we find how the terminating layer of a single crystal profoundly influences the terrace edge structure. © 1998 American Institute of Physics.
C. Rossel, A. Dimoulas, et al.
ESSDERC 2008
L. Czornomaz, M. El Kazzi, et al.
Solid-State Electronics
G.J. Norga, A. Guiller, et al.
MRS Proceedings 2003
A. Dietzel, R. Berger, et al.
Sensors and Actuators, A: Physical