John G. Long, Peter C. Searson, et al.
JES
Simultaneous n-Type and p-Type diffusion, compositional mixing, and formation of ohmic contacts have been used in the fabrication of lateral p-i-n photodetectors for short (0.85 μ m) and long (1.3 μ m and 1.5 μ m) wavelengths. Zinc-doped tungsten and MoGe2 are used for the p-Type and n-Type contacts, doping, and compositional mixing using rapid thermal processing at approximately=750 degrees C. With structures utilizing GaAs and Ga0.47In0.53As active regions, 3 dB bandwidths exceeding 7.5 GHz and 18.0 GHz, respectively, have been achieved at bias voltages of approximately=5 V. The corresponding dark currents are sub-100 pA and sub-10 nA and the devices exhibit a large dynamic range, near-ideal responsivity, and a high sensitivity. The performance, ease of fabrication, and process compatibility make these devices suitable for integration in digital circuits using FET.
John G. Long, Peter C. Searson, et al.
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.H. Comfort, E.F. Crabbe, et al.
IEDM 1991
E. Burstein
Ferroelectrics