Sandip Tiwari, Steven L. Wright, et al.
IEEE Electron Device Letters
Contact-self-aligned diffusion and compositional mixing has been utilized in the fabrication of lateral p-i-n photodetectors in Ga0.47In0.53As and GaAs for 1.3 and 0.85 μm wavelength operation. The p-type contact and diffusion utilizes W(Zn) metallurgy and the n-type contact and diffusion utilizes MoGe2 metallurgy. Bandwidths exceeding 7.5 and 18.0 GHz, respectively, have been obtained using these structures with bias voltages of ≃5 V. The performance, ease of fabrication, and process compatibility make these devices suitable for integration in digital circuits employing field-effect transistors. © 1992 IEEE
Sandip Tiwari, Steven L. Wright, et al.
IEEE Electron Device Letters
Sandip Tiwari, Jeremy Burroughes, et al.
IEDM 1991
Hussein I. Hanafi, Sandip Tiwari
ESSDERC 1995
Sandip Tiwari
IEEE T-ED