Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters
Contact-self-aligned diffusion and compositional mixing has been utilized in the fabrication of lateral p-i-n photodetectors in Ga0.47In0.53As and GaAs for 1.3 and 0.85 μm wavelength operation. The p-type contact and diffusion utilizes W(Zn) metallurgy and the n-type contact and diffusion utilizes MoGe2 metallurgy. Bandwidths exceeding 7.5 and 18.0 GHz, respectively, have been obtained using these structures with bias voltages of ≃5 V. The performance, ease of fabrication, and process compatibility make these devices suitable for integration in digital circuits employing field-effect transistors. © 1992 IEEE
Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters
Sandip Tiwari, Farhan Rana, et al.
Applied Physics Letters
Hao Lin, Haitao Liu, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Sandip Tiwari, M. Hargis, et al.
IEEE Photonics Technology Letters