Supercritical CO2 treatments for semiconductor applications
S. Gangopadhyay, J.A. Lubguban, et al.
MRS Proceedings 2004
We report on the excimer laser-induced photoablation of some organosilane polymers utilizing quartz microbalance techniques to monitor the nature of the ablation phenomenon. A fluence threshold for the ablation process is identified beyond which the material removal rate depends nonlinearly on the adsorbed laser fluence. Below this threshold, photo-oxidation of the polymer is observed as evidenced by mass uptake of the film. Our results suggest that photoablation of the polysilanes studied is a result of a combination of thermal and photochemical processes.
S. Gangopadhyay, J.A. Lubguban, et al.
MRS Proceedings 2004
G.A. Held, L.L. Kosbar, et al.
Physical Review Letters
D.M. Burland, R.D. Miller, et al.
SPIE OE/LASE 1993
R.D. Miller, R. Hässig
Tetrahedron Letters