Publication
Applied Physics Letters
Paper
Laser detection of diatomic products of plasma sputtering and etching
Abstract
We report on in situ detection of diatomic products of plasma sputtering and reactive ion etching using the technique of laser-induced fluorescence. The diatomic molecules SiN, SiO, and SiF are observed in the gas phase when a silicon surface is subjected to ion bombardment in plasmas containing N 2, O2, and CF4, respectively. Information about the production mechanisms is obtained from the measured product concentrations under varying plasma conditions.