PaperAccumulation capacitance for GaAs-SiO2 interfaces with Si interlayersJ. Freeouf, D.A. Buchanan, et al.Applied Physics Letters
PaperHot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)T.N. Theis, B.D. Parker, et al.Applied Physics Letters
PaperNoise spectroscopy of deep level (DX) centers in GaAs-AlxGa 1-xAs heterostructuresJ.R. Kirtley, T.N. Theis, et al.Journal of Applied Physics
Conference paperA-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor depositionS.L. Wright, M.B. Rothwell, et al.Device Research Conference 1993
