IR emission from Schottky barrier carbon nanotube FETs

Abstract

The infrared (IR) emission from Schottky barrier carbon nanotube FETs was investigated. The optical emission was characterized with an IR camera and the weak IR emission was detected when there is simultaneous electron and hole injection. The emitted light was linearly polarized along the nanotube axis. The characteristics of the device was found to be affected by the electrostatic field generated by both the drain and the gate electrodes.