Conference paper
High performance complementary bipolar technology
J. Warnock, J.D. Cressler, et al.
VLSI Technology 1993
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
J. Warnock, J.D. Cressler, et al.
VLSI Technology 1993
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IEDM 1990
Joachim N. Burghartz, John D. Cressler, et al.
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G. Shahidi, J. Warnock, et al.
VLSI Technology 1993