J. Brugger, M. Willemin, et al.
TRANSDUCERS 1997
We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
J. Brugger, M. Willemin, et al.
TRANSDUCERS 1997
P. Guéret, E. Marclay, et al.
Solid State Communications
P. Guéret
Physical Review Letters
P. Guéret, M. Reiser
Applied Physics Letters