J.A. Brum, P. Voisin, et al.
Surface Science
We report the observation in InAs-GaSb semiconductor superlattices of a photovoltaic effect that has a quantum origin, as it arises from the spatial separation of the electron and hole ground-state wave functions in these type II superlattices. The results are consistent with the simplest theoretical predictions, except for the voltage sign, which evidences a depopulation of the surface layer.
J.A. Brum, P. Voisin, et al.
Surface Science
J.C. Maan, Y. Guldner, et al.
Solid State Communications
J.C. Maan, Y. Guldner, et al.
Surface Science
M. Capizzi, M. Voos, et al.
Solid State Communications