S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Using magneto-optical methods, we have measured the energy separation between the subbands in a semimettalic InAsGaSb superlattice associated with the InAs conduction band (CB) and the GaSb valence band (VB) as a function of hydrostatic pressure up to 11kBar. The CB-VB energy overlap (Δ) at the InAsGaSb interface is found to depend less on pressure than predicted on grounds of usual assumptions concerning band energy shifts induced by pressure. Also inter-subband coupling has been observed between the bands in different adjacent materials. This coupling is found to lead to anti-crossing in the subband dispersion relation. © 1986.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
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SPIE Optical Materials for High Average Power Lasers 1992
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Microelectronic Engineering