Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
TiN films were prepared by reactive sputtering of titanium in a gas mixture of argon and nitrogen using a sputter gun. The properties of the sputtered films were investigated with Rutherford backscattering spectrometry, electrical resistivity and optical reflectivity measurements, X-ray diffractometry and transmission electron microscopy. For a given input power to the sputter gun the film properties depend on the gas composition, the bias voltage applied to the substrates and oxygen contamination during sputtering. In addition, it was found that powering the sputter gun with r.f. causes an iron contamination in the films by material sputtered off the plasma confinement shield. This contamination is very much reduced when d.c. is employed to power the sputter gun. © 1983.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
K.N. Tu
Materials Science and Engineering: A
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials