Sung Ho Kim, Oun-Ho Park, et al.
Small
In this work, in‐situ grazing incidence X‐ray scattering is used to correlate surface structures observed during organometallic vapor phase growth of GaAs with in‐situ optical measurements using reflectance difference spectroscopy (RDS). Our observations of several reconstructions confirm that RDS signals vary among the different surfaces present under vapor phase epitaxy conditions, as also occurs under ultra‐high vacuum growth conditions. In addition, the simultaneous observation of intensity oscillations in the X‐ray scattering signal and the reflectance difference signal indicates that both of these techniques can be used to monitor layer‐by‐layer growth processes under some conditions. Copyright © 1995 WILEY‐VCH Verlag GmbH & Co. KGaA
Sung Ho Kim, Oun-Ho Park, et al.
Small
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry