Publication
IEDM 2003
Conference paper

Inversion channel mobility in high-κ high performance MOSFETs

Abstract

For the first time we present compelling theoretical and experimental evidence that the inversion channel mobility in HfO 2/SiO(N)/Si is significantly reduced by soft-phonon scattering. This scattering mechanism - associated with the high-κ material itself- poses an intrinsic limit to the mobility that can not be countered by process optimization.

Date

Publication

IEDM 2003

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