E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Unoccupied bulk and surface electronic states of InP, InAs, and InSb are determined via inverse photoemission from their cleaved (110) surfaces. With use of a tunable photon detector, the band dispersion of the lowest p-like bands along the KX line is mapped and the critical points 15 and X1 of the conduction band are determined (15=5.3, 4.5, and 4.2 eV and X1=2.8, 1.9, and 1.8 eV, for InP, InAs, InSb, respectively). Surface resonances are found in the region 1.92.7 eV above the valence-band maximum. Resonance effects near the In 4d core-level threshold and the onset of In 4d luminescence are studied. © 1987 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science