HYDROGEN IN A GLASSY AND CRYSTALLIZED Pd-Si ALLOY.
B.S. Berry, W.C. Pritchet
International Conference on Rapidly Quenched Metals 1984
The internal tensile stress in polycrystalline diamond films deposited on silicon substrates has been measured from 100 to 700 K by a vibrating-membrane method. The stress increases strongly with temperature, in a manner consistent with the elastic accommodation of the differential thermal strain between diamond and silicon. The results indicate that the films contain a tensile growth stress of about 500 MPa at the deposition temperature of 1123 K. Derived values of the biaxial elastic modulus fall in the range 730-850 GPa.
B.S. Berry, W.C. Pritchet
International Conference on Rapidly Quenched Metals 1984
A.D. Marwick, G.J. Clark, et al.
Physical Review B
S.M. Rossnagel, S.J. Whitehair, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.F. Ziegler, J.J. Cuomo, et al.
Applied Physics Letters