A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The electronic and atomic properties of the interface determine to a large degree the adhesion quality of thin coatings on a material. Since adhesion is promoted by compound formation and atomic intermixing in the interfacial layer, the absence of a stable germanium carbide compound surmises a poor adhesion of a-C films on Ge substrates. In contrast, we found a good adhesion of our a-C films on Ge which stimulated us to investigate the properties of the interface with photoelectron spectroscopy, high resolution transmission electron microscopy, and ion channeling techniques. We found the formation of a metastable phase and the existence of atomic intermixing in the interfacial layer which clearly demonstrate the reactive nature of the a-C/Ge interface. © 1990, The Electrochemical Society, Inc. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
R. Ghez, M.B. Small
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Eloisa Bentivegna
Big Data 2022