A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
We report the first measurement of local structure in the thin layers of a semiconductor superlattice using the extended x-ray absorption fine structure. The measured values of interatomic distance and Debye-Waller factor in InAs offer a direct confirmation of the structure as intended in the growth process, and set an upper limit of the lattice strain to less than 1.5%. The data also indicate an anisotropy of the electron mean-free path in the thin layers and structural disorder at distances beyond the nearest neighbors. © 1985 The American Physical Society.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B