A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory. © 1986 The American Physical Society.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
T.N. Morgan
Semiconductor Science and Technology
P.C. Pattnaik, D.M. Newns
Physical Review B