Conference paper
Silicon nanophotonic mid-IR optical modulator
Mackenzie A. Van Camp, Solomon Assefa, et al.
CLEO 2012
A waveguide-integrated Germanium avalanche photodetector with gain-bandwidth-product of 350GHz, sensitivity improvement of 6dB, and excess noise with keff ∼ 0.2 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector has capacitance of 10±2fF and operates at 40Gbps. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©The Electrochemical Society.
Mackenzie A. Van Camp, Solomon Assefa, et al.
CLEO 2012
Solomon Assefa, Fengnian Xia, et al.
Nature
Yurii A. Vlasov, Fengnian Xia, et al.
CLEO 2008
Min Yang, William M. J. Green, et al.
Optics Express