integrated thermal chemical vapor deposition processing for Si technology

Abstract

A multichamber integrated ultrahigh vacuum processing and analysis facility is described that addresses issues of chemical growth processes in terms of fundamental chemical reaction mechanisms, as well as the correlation of process parameters and specific materials properties. Examples for research using and related to ultraclean and integrated processing are given. (1) Impurities left at Si(100) surfaces as a result of wafer preclean with HF and UV/03are characterized with in situ analysis equipment, such as x-ray photoemission spectroscopy and high resolution electron energy loss spectroscopy. (2) Electrical figures of merit are determined by fabricating simple test structures [metal-oxide semiconductor (MOS) capacitors] in situ. They show electrical properties (breakdown field, interface state densities) comparable to wafers processed in standard tools. (3) Particle creation and particle size distribution on wafers after handling in the integrated processing tool are shown. (4) An example of basic research on the chemical equilibrium on the wafer surface during chemical vapor deposition film growth is shown for Si epitaxy using SiH4. © 1990, American Vacuum Society. All rights reserved.