PaperShallow junctions by high-dose As implants in Si: Experiments and modelingM.Y. Tsai, F.F. Morehead, et al.Journal of Applied Physics
PaperComment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]F.F. MoreheadJournal of Materials Research
PaperEfficient Injection Electroluminescence from p-n Injection in Znx,Cd1-x,Te26G. Mandel, F.F. MoreheadIEEE T-ED
PaperEfficient injection electroluminescence in znte by avalanche breakdownB.L. Crowder, F.F. Morehead, et al.Applied Physics Letters
