Conference paper
Mechanisms and models of Si film growth from SiH4 and Si2H6
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
The reaction of atomic hydrogen with adsorbed Br is compared on Si(100) and Si(111) surfaces from 50°C to 300°C. On both surfaces, Br removal rate is first order in atomic hydrogen flux, first-order in Br coverage, and exhibits a near zero activation energy. On Si(111), this rate also depends on surface hydrogen coverage, indicating that different mechanisms occur on these surfaces. © 1993 American Institute of Physics.
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
D.D. Koleske, S. Gates
The Journal of Chemical Physics
S. Gates
Journal of Physical Chemistry