M. Tatham, R.A. Taylor, et al.
Solid State Electronics
Paper
Inelastic tunneling in AlAs-GaAs-AlAs heterostructures
Abstract
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
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