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Microelectronics Reliability
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Including spatial correlations of channel length and threshold voltage variation in circuit simulations

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Abstract

Some integrated circuit manufacturing processes produce variation which is strongly correlated between devices physically near each other but not correlated between devices which are widely separated. Devices separated by intermediate distances are partial correlated. In this paper we describe a method to characterize and model variation which shows this type of spatial correlations. © 2011 Elsevier Ltd. All rights reserved.

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Microelectronics Reliability

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