InAs/GaAs quantum well lasers grown by atomic layer epitaxy

Abstract

We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The quantum wells in this structure are six uncoupled InAs layers 6.6 Å thick separated by 509 Å thick GaAs barriers. These are the thinnest and most highly strained (7.4%) quantum wells ever reported to support stimulated emission. These results demonstrate that ALE is capable of growing laser quality material with good control of the growth process. © 1987 SPIE.