Kangguo Cheng, Joseph W. Lyding
IEEE Electron Device Letters
The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.
Kangguo Cheng, Joseph W. Lyding
IEEE Electron Device Letters
Kangguo Cheng, Chanro Park, et al.
VLSI Technology 2020
Kevin Brennan, Karl Hess, et al.
IEEE T-ED
Kangguo Cheng, Chanro Park, et al.
IEEE Transactions on Electron Devices