IEEE Transactions on Electron Devices

Paper

01 Jan 1993

IIA-9 Undoped SiGe Heterostructure Field Effect Transistors

View publication

Abstract

No abstract available.

Paper

Defect states in strain-relaxed Si_0.7Ge_0.3 layers grown at low temperature

P.M. Mooney, L. Tilly, et al.

Journal of Applied Physics

Paper

Extremely high transconductance Ge/Si_0.4Ge_0.6 p-MODFET's grown by UHV-CVD

S.J. Koester, R. Hammond, et al.

IEEE Electron Device Letters

Paper

Laterally scaled Si-Si_0.7Ge_0.3 n-MODFETs with f_max > 200 GHz and low operating bias

S.J. Koester, K.L. Saenger, et al.

IEEE Electron Device Letters

Paper

Electrical characterization of Si/Si_0.7Ge_0.3 quantum well wires fabricated by low damage CF₄ reactive ion etching

K.Y. Lee, S.J. Koester, et al.

Microelectronic Engineering

View all publications