PaperTunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gainM. Heiblum, D.C. Thomas, et al.Applied Physics Letters
PaperOn the rectifying ability of a p-type semi-insulating junctionP. Solomon, K. WeiserJournal of Applied Physics
Conference paperExperimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETsP. Solomon, S.E. Laux, et al.DRC 2009
PaperRoom-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistorsMarshall I. Nathan, P.M. Mooney, et al.Applied Physics Letters
