Conference paper
Chemistry of hexamethylcyclotrisilazane (HMCTS) silylation
K.J. Stewart, J.M. Shaw, et al.
Symposium on Patterning Science and Technology 1989
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
K.J. Stewart, J.M. Shaw, et al.
Symposium on Patterning Science and Technology 1989
D. Angell, G.S. Oehrlein
SPIE Processing Integration 1990
P.R. Pukite, Subramanian S. Iyer, et al.
Applied Physics Letters
B.N. Eldridge, W. Reuter, et al.
ACS PMSE 1989