Conference paper
High performance Si and SiGe-base pnp transistors
D.L. Harame, J.M.C. Stork, et al.
IEDM 1988
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
D.L. Harame, J.M.C. Stork, et al.
IEDM 1988
T.F. Kuech, M.A. Tischler, et al.
Journal of Crystal Growth
B.N. Eldridge, C. Feger, et al.
Macromolecules
G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters