H. Weman, J.L. Lindström, et al.
Journal of Applied Physics
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
H. Weman, J.L. Lindström, et al.
Journal of Applied Physics
G.S. Oehrlein, J.G. Clabes, et al.
JVSTA
G.M.W. Kroesen, G.S. Oehrlein, et al.
Journal of Applied Physics
R. Bruce, T. Lin, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics